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IRF7779L2PBF - Power MOSFET

Description

achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

Features

  • l Gate Charge (nC) Fig 8. Typical Capacitance vs. Drain-to-Source Voltage Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 IRF7779L2PbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C TJ = 25°C TJ = -40°C 10 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage.

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l RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified IRF7779L2PbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) 150V min ±20V max 9.0mΩ@ 10V Qg tot Qgd Vgs(th) 97nC 33nC 4.
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