IRF7779L2PBF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF7779L2PBF
Manufacturer	International Rectifier
File Size	280.60 KB
Description	Power MOSFET
Datasheet	IRF7779L2PBF Datasheet
Additional preview pages of the IRF7779L2PBF datasheet.

Product details

Description

The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing me

Features

l Gate Charge (nC) Fig 8. Typical Capacitance vs. Drain-to-Source Voltage Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 IRF7779L2PbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C TJ = 25°C TJ = -40°C 10 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage.

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Published: Oct 16, 2015 |